Computer simulation of generation-recombination currents in amorphous silicon p-n diode structures
S. A. AzimovInstitute of Technical Physics, Academy of Sciences of the Uzbekian SSR, TashkentP. M. Karageofgy-AlkalaevInstitute of Technical Physics, Academy of Sciences of the Uzbekian SSR, TashkentA. Yu. LeĭdermanInstitute of Technical Physics, Academy of Sciences of the Uzbekian SSR, TashkentShai RubinInstitute of Technical Physics, Academy of Sciences of the Uzbekian SSR, Tashkent
ABI
Аннотация
Аннотация мавжуд эмас.