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Иш: Computer simulation of generation-recombination currents in amorphous silicon p-n diode structures

  1. Statistics of the Recombinations of Holes and Electrons

    W. Shockley, W. T. Read

    Мақола195219 иқтибос
    ABI

  2. Carrier Generation and Recombination in P-N Junctions and P-N Junction Characteristics

    Chih‐Tang Sah, Robert N. Noyce, W. Shockley

    Мақола195714 иқтибос
    ABI

  3. On the theory of double injection in semiconductors with continuous distribution of trapping levels within the Gap

    A. Yu. Leĭderman

    МақолаSilicon and Solar Cell Technologiesphysica status solidi (a)19793 иқтибос
    ABI

  4. Recent developments in amorphous silicon p-n junction devices

    R.A.G. Gibson, W. E. Spear, P. G. Le Comber +1

    Мақола19802 иқтибос
    ABI

  5. Phonon-assisted carrier transport across a grain boundary

    Chung-Sheng Wu, E.S. Yang

    Мақола19822 иқтибос
    ABI

  6. RF Sputtered gold-amorphous silicon Schottky-barrier diodes

    Le Xu, D.K. Reinhard, Mark G. Thompson

    Мақола19822 иқтибос
    ABI

  7. Doped amorphous semiconductors

    P. G. LeComber, W. E. Spear

    Боб19792 иқтибос
    ABI

  8. Determination of depletion width in amorphous materials using a simple analytical model

    M. S. Shur, W. Czubatyj, A. Madan

    Мақола19802 иқтибос
    ABI

  9. Energy Conversion Process of p-i-n Amorphous Si Solar Cells

    Yukinori Kuwano, Shinya Tsuda, M. Ohnishi

    Мақола19822 иқтибос
    ABI

  10. Сарлавҳасиз

    Бошқа1 иқтибос
    ABI