Ушбу ишга иқтибос қилган ишлар

6 та иш

Иш: Volume-Controlled, Two-Carrier Currents in Solids: The Injected Plasma Case

1. Statistics of Inter‐Impurity Recombination of Electrons and Holes in Semiconductors

   P. M. Karageorgy‐Alkalaev, A. Yu. Leĭderman

   МақолаSilicon and Solar Cell Technologiesphysica status solidi (b)19685 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.531304

2. On the theory of current–voltage characteristics of semiconductor diode structures with strong carrier accumulation

   A. Yu. Leĭderman, P. M. Karageorgy‐Alkalaev

   МақолаSilicon and Solar Cell Technologiesphysica status solidi (a)19793 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.496738

3. Double injection of a strongly degenerate plasma. Volume controlled current regime

   S. A. Azimov, Sh. A. Gulamov, Yu. A. Katulevskii +1

   МақолаPlasma Diagnostics and Applicationsphysica status solidi (a)19792 иқтибос

   ABIABI:AkademIndex/openalex/1979.article.000061

4. Influence of deep impurity levels on double injection in semiconductors

   P. M. Karageorgy‐Alkalaev, A. Yu. Leĭderman, F. Ya. Rabinovich

   МақолаSilicon and Solar Cell Technologiesphysica status solidi (a)19721 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.605836

5. The influence of carrier capture in deep traps on the small-signal characteristics of double-injection currents in semiconductors

   D. A. Aronov, E. P. Kotov, Ya. P. Kotov

   МақолаSilicon and Solar Cell Technologiesphysica status solidi (a)19750 иқтибос

   ABIABI:AkademIndex/openalex/1975.article.000063

6. Injection of degenerate electron-hole plasma

   Yu. A. Katulevskii

   МақолаSilicon and Solar Cell Technologiesphysica status solidi (a)19850 иқтибос

   ABIABI:AkademIndex/openalex/1985.article.000071