Ушбу ишга иқтибос қилган ишлар

3 та иш

Иш: Initial stages of InAs epitaxy on vicinal GaAs(001)-(2×4)

1. Spectroscopy of layers of InAs in GaAs across the transition from layered to three-dimensional growth

   Б. Н. Звонков, E. R. Lin’kova, I. G. Malkina +2

   МақолаSemiconductor Quantum Structures and DevicesJournal of Experimental and Theoretical Physics Letters19960 иқтибос

   ABIABI:AkademIndex/openalex/1996.article.000043

2. Lasing in submonolayer CdSe structures in a ZnSe matrix without external optical confinement

   I. L. Krestnikov, N. N. Ledentsov, М. В. Максимов +6

   МақолаSemiconductor Quantum Structures and DevicesTechnical Physics Letters19970 иқтибос

   ABIABI:AkademIndex/openalex/1997.article.000098

3. Lasing in submonolayer InAs/AlGaAs structures without external optical confinement

   B. V. Volovik, A. F. Tsatsul’nikov, N. N. Ledentsov +11

   МақолаSemiconductor Quantum Structures and DevicesTechnical Physics Letters19980 иқтибос

   ABIABI:AkademIndex/openalex/1998.article.000117