Ушбу ишга иқтибос қилган ишлар

2 та иш

Иш: Molecular dynamics calculations of defect energetics in β-SiC

1. High-temperature high-dose implantation of N+ and Al+ ions in 6H-SiC

   R.A. Yankov, M. Voelskow, W. Kreissig +6

   МақолаSilicon Carbide Semiconductor TechnologiesTechnical Physics Letters19970 иқтибос

   ABIABI:AkademIndex/openalex/1997.article.000097

2. Theoretical description of high-temperature implantation of silicon carbide with N+ and Al+ ions

   D. V. Kulikov, Yu. V. Trushin, R.A. Yankov +2

   МақолаSilicon Carbide Semiconductor TechnologiesTechnical Physics Letters19980 иқтибос

   ABIABI:AkademIndex/openalex/1998.article.000168