Ушбу ишга иқтибос қилган ишлар

2 та иш

Иш: Defects in irradiated silicon: EPR of the tin-vacancy pair

1. Study of certain properties of Si-Si1−xGex (0 ≤ x ≤ 1) structures grown from a restricted tin-based solution-melt by liquid-phase epitaxy

   Б. Сапаев, A. S. Saidov

   МақолаSemiconductor materials and interfacesSemiconductors20051 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.278122

2. Positron probing of phosphorus-vacancy complexes in silicon irradiated with 15 MeV protons

   N.Yu. Arutyunov, V. V. Emtsev, R. Krause‐Rehberg +4

   МақолаMuon and positron interactions and applicationsJournal of Physics Conference Series20151 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.572512