Dark properties and transient current response of Si0.95Ge0.05 n+p devices
A. RuzinDepartment of Physical Electronics, Faculty of Engineering, Tel Aviv University, Tel Aviv 69978, IsraelS. MarunkoDepartment of Physical Electronics, Faculty of Engineering, Tel Aviv University, Tel Aviv 69978, IsraelN. V. AbrosimovInstitute of Crystal Growth, Max-Born-Str. 2, D-12469 Berlin, GermanyH. RiemannInstitute of Crystal Growth, Max-Born-Str. 2, D-12469 Berlin, Germany
2003en
ABI
Аннотация
Аннотация мавжуд эмас.
Идентификаторлар
Иқтибослар ва манбалар
2 та иқтибос0 та фойдаланилган манба