Ушбу ишга иқтибос қилган ишлар

2 та иш

Иш: Dark properties and transient current response of Si0.95Ge0.05 n+p devices

1. Growth and properties of single crystals of Si1 − x Ge x (0 < x < 0.35) solid solutions

   I. G. Atabaev, N. A. Matchanov, M. U. Khazhiev +1

   МақолаSilicon and Solar Cell TechnologiesTechnical Physics Letters20101 иқтибос

   ABIABI:AkademIndex/openalex/2010.article.000289

2. Electrical properties of p-Si1 − x Ge x Au-Based p-i-n structures and Schottky barriers

   I. G. Atabaev, N. A. Matchanov, É. N. Bakhranov +1

   МақолаSilicon Nanostructures and PhotoluminescenceInorganic Materials20080 иқтибос

   ABIABI:AkademIndex/openalex/2008.article.000319