Ушбу ишга иқтибос қилган ишлар

2 та иш

Иш: Thermal emission and capture of electrons at sulfur centers in silicon

1. Influence of the Post-Diffusion Hardening Rate and Thermal Treatment on the Thermal Stability of the Charge-Carrier Lifetime in Overcompensated n-Si<B, S>

   M. Kаrimov, A. K. Karakhodzhaev

   МақолаSemiconductor materials and interfacesRussian Physics Journal20010 иқтибос

   ABIABI:AkademIndex/openalex/2001.article.000182

2. Method of Increasing Photosensitivity of Silicon Power Planes for Solar Energy

   Sh. I. Askarov, B. Z. Sharipov, Sh. K. Saliyeva +1

   МақолаSolid-state spectroscopy and crystallographyApplied Solar Energy20180 иқтибос

   ABIABI:AkademIndex/openalex/2018.article.000969