Ушбу ишга иқтибос қилган ишлар

2 та иш

Иш: Epitaxial growth of Si on (1012) Al2O3 by partially ionized vapor deposition

1. Ion bombardment effect on Si homoepitaxial growth from ion molecular beams

   T.S. Pugacheva, М. С. Саидов, A. S. Lutovich

   МақолаIon-surface interactions and analysisRadiation Effects19871 иқтибос

   ABIABI:AkademIndex/openalex/1987.article.000061

2. “Radiation Sieve” Effect during Epitaxy from Low Energy Ion-Molecular Flow

   A. Budrevich, A. Lyutovich, Б. Л. Оксенгендлер

   МақолаGeological and Geochemical Analysisphysica status solidi (a)19891 иқтибос

   ABIABI:AkademIndex/openalex/1989.article.000071