Ушбу ишга иқтибос қилган ишлар

2 та иш

Иш: Electrical Properties of Zinc and Cadmium Ion Implanted Layers in Gallium Arsenide

1. Ion doping of gallium arsenide

   П. В. Павлов, E. I. Zorin, D. I. Tetelbaum

   МақолаPhase-change materials and chalcogenidesRussian Physics Journal19800 иқтибос

   ABIABI:AkademIndex/openalex/1980.article.000147

2. Electrical properties of ion-doped GaAs films obtained by implanting E=100-keV Cd+ ions

   B. S. Azikov, V. N. Brudnyı̆, I. V. Kаmenskaya +1

   МақолаSemiconductor materials and interfacesRussian Physics Journal19810 иқтибос

   ABIABI:AkademIndex/openalex/1981.article.000091