Ушбу ишга иқтибос қилган ишлар

2 та иш

Иш: Electrical characterization and conduction mechanism of impurity-doped BaSi2 films grown on Si(111) by molecular beam epitaxy

1. On the Band-Gap Width of NiSi2 Nanocrystals Created in the Surface Region of Si Using Ion Implantation

   N. M. Mustafoeva, A. K. Tashatov, Б. Е. Умирзаков

   МақолаSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20230 иқтибос

   ABIABI:AkademIndex/openalex/2023.article.007102

2. On Si/NiSi2/Si(111) Heterostructures Obtained by Solid-Phase Deposition

   N. M. Mustafoeva, A. K. Tashatov, Б. Е. Умирзаков +1

   МақолаSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20240 иқтибос

   ABIABI:AkademIndex/openalex/2024.article.010336