Ушбу ишга иқтибос қилган ишлар

3 та иш

Иш: Physical mechanism of gettering of impurity Ni atom clusters in Si lattice

1. Investigation of the Influence of Nickel on the Behavior of Thermal Donors in Silicon

   B. K. Ismaylov, N. F. Zikrillayev, Kanatbay A. Ismailov +2

   МақолаSilicon and Solar Cell TechnologiesEast European Journal of Physics20250 иқтибос

   ABIABI:AkademIndex/openalex/2025.article.009032

2. Thermal stability parameters of silicon doped with nickel impurity atoms

   B. K. Ismaylov, Kanatbay A. Ismailov, Paraxat Dlimbetov +2

   МақолаThermal properties of materialsAIP conference proceedings20250 иқтибос

   ABIABI:AkademIndex/openalex/2025.article.009659

3. The Influence of Impurity Nano- and Microclusters on the Photovoltaic and Electrophysical Properties of Silicon

   N. F. Zikrillaev, K. S. Ayupov, Kh. F. Zikrillaev +4

   МақолаSilicon and Solar Cell TechnologiesSurface Engineering and Applied Electrochemistry20260 иқтибос

   ABIABI:AkademIndex/openalex/2026.article.009999