G. M. Fuks

1 ta ish

Fizika-Texnika Instituti

1. Investigation of the electrical and photoelectric properties of manganese-doped gallium arsenide as a material for photoresistive detectors

   В. В. Антонов, А. В. Войцеховский, M. A. Krivov +6

   MaqolaAdvanced Semiconductor Detectors and MaterialsRussian Physics Journal19810 iqtibos

   ABIABI:AkademIndex/1981.article.000112