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Investigation of the electrical and photoelectric properties of manganese-doped gallium arsenide as a material for photoresistive detectors

В. В. АнтоновV. D. Kuznetsov Siberian Physicotechnical Institute at the State University, TomskА. В. ВойцеховскийV. D. Kuznetsov Siberian Physicotechnical Institute at the State University, TomskM. A. KrivovV. D. Kuznetsov Siberian Physicotechnical Institute at the State University, TomskE. V. MalisovaV. D. Kuznetsov Siberian Physicotechnical Institute at the State University, Tomsk�. N. Mel'chenkoV. D. Kuznetsov Siberian Physicotechnical Institute at the State University, Tomsk,М. П. НикифороваV. D. Kuznetsov Siberian Physicotechnical Institute at the State University, TomskE. PopovaV. D. Kuznetsov Siberian Physicotechnical Institute at the State University, TomskG. M. FuksV. D. Kuznetsov Siberian Physicotechnical Institute at the State University, TomskS. S. KhludkovV. D. Kuznetsov Siberian Physicotechnical Institute at the State University, Tomsk

Russian Physics Journaljournal1981en

Ochiq kirish: yoʻq

ABI

Annotatsiya

Annotatsiya mavjud emas.

Mavzular

Advanced Semiconductor Detectors and Materials Semiconductor materials and interfaces Semiconductor Quantum Structures and Devices

Identifikatorlar

DOI: 10.1007/bf00891590

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