M. A. Krivov

6 ta ish

Fizika-Texnika Instituti

1. Influence of copper impurity and structure defects on the properties of compound CdSnAs2

   Olga V. Voevodina, A. P. Vyatkin, T. V. Vedernikova +3

   MaqolaAdvanced Research in Systems and Signal ProcessingRussian Physics Journal19800 iqtibos

   ABIABI:AkademIndex/1980.article.000080

2. Behavior of copper in gallium arsenide with high tin concentration

   I. V. Kamenskaya, M. A. Krivov, E. V. Malisova +6

   MaqolaSemiconductor Quantum Structures and DevicesRussian Physics Journal19800 iqtibos

   ABIABI:AkademIndex/1980.article.000114

3. Electrical properties of ion-doped GaAs films obtained by implanting E=100-keV Cd+ ions

   B. S. Azikov, V. N. Brudnyı̆, I. V. Kamenskaya +1

   MaqolaSemiconductor materials and interfacesRussian Physics Journal19810 iqtibos

   ABIABI:AkademIndex/1981.article.000091

4. Investigation of the electrical and photoelectric properties of manganese-doped gallium arsenide as a material for photoresistive detectors

   В. В. Антонов, А. В. Войцеховский, M. A. Krivov +6

   MaqolaAdvanced Semiconductor Detectors and MaterialsRussian Physics Journal19810 iqtibos

   ABIABI:AkademIndex/1981.article.000112

5. Thermal stability of optical properties of electron-irradiated GaAs

   D. L. Budnitskii, M. A. Krivov

   MaqolaSemiconductor materials and interfacesRussian Physics Journal19820 iqtibos

   ABIABI:AkademIndex/1982.article.000106

6. Photoionization cross sections of E levels in electron-irradiated n-type GaAs

   D. L. Budnitskii, M. A. Krivov, E. Popova

   MaqolaElectron and X-Ray Spectroscopy TechniquesRussian Physics Journal19860 iqtibos

   ABIABI:AkademIndex/1986.article.000096