I. V. Kamenskaya

2 ta ish

Fizika-Texnika Instituti

1. Behavior of copper in gallium arsenide with high tin concentration

   I. V. Kamenskaya, M. A. Krivov, E. V. Malisova +6

   MaqolaSemiconductor Quantum Structures and DevicesRussian Physics Journal19800 iqtibos

   ABIABI:AkademIndex/1980.article.000114

2. Electrical properties of ion-doped GaAs films obtained by implanting E=100-keV Cd+ ions

   B. S. Azikov, V. N. Brudnyı̆, I. V. Kamenskaya +1

   MaqolaSemiconductor materials and interfacesRussian Physics Journal19810 iqtibos

   ABIABI:AkademIndex/1981.article.000091