V. N. Brudnyı̆

12 ta ish

Fizika-Texnika Instituti

1. Electrical properties of InAs irradiated with protons

   V. N. Brudnyı̆, N. G. Kolin, А. И. Потапов

   Maqola20035 iqtibos

   ABIABI:AkademIndex/2026.other.110172

2. Local neutrality conception: Fermi level pinning in defective semiconductors

   V. N. Brudnyı̆, S. N. Grinyaev, V. E. Stepanov

   Maqola19952 iqtibos

   ABIABI:AkademIndex/2026.other.529736

3. Positron annihilation in electron-irradiated p-ZnGeP2 compound

   V. N. Brudnyı̆, V. A. Novikov, A. D. Pogrebnyak +1

   Maqola19842 iqtibos

   ABIABI:AkademIndex/2026.other.567067

4. The electrical and optical properties of 2.0 MeV electron-irradiated ZnGeP2

   V. N. Brudnyı̆, D. L. Budnitskii, M. A. Krivov +3

   Maqola19782 iqtibos

   ABIABI:AkademIndex/2026.other.567068

5. Positron Annihilation and Electrical Properties of Electron-Irradiated (≈ 2 MeV) InAs Crystals

   V. N. Brudnyı̆, S.A. Vorobiev, A. A. Tsoi

   MaqolaMuon and positron interactions and applicationsphysica status solidi (a)19821 iqtibos

   ABIABI:AkademIndex/1982.article.000005

6. Electrical properties of ion-doped GaAs films obtained by implanting E=100-keV Cd+ ions

   B. S. Azikov, V. N. Brudnyı̆, I. V. Kamenskaya +1

   MaqolaSemiconductor materials and interfacesRussian Physics Journal19810 iqtibos

   ABIABI:AkademIndex/1981.article.000091

7. Electrical and optical properties of electron-irradiated ZnGeP2

   V. N. Brudnyı̆, V. A. Novikov, E. Popova

   MaqolaChalcogenide Semiconductor Thin FilmsRussian Physics Journal19860 iqtibos

   ABIABI:AkademIndex/1986.article.000025

8. Electrical Properties and Positron Annihilation in Neutron-Irradiated n-InP

   V. N. Brudnyı̆, V. A. Charchenko, N. G. Kolin +3

   MaqolaSemiconductor materials and devicesphysica status solidi (a)19860 iqtibos

   ABIABI:AkademIndex/1986.article.000069

9. Positron Trapping at Point Defects in Electron-Irradiated GaAs

   V. N. Brudnyı̆, A. D. Pogrebn Yak, Yu. P. Surov +1

   MaqolaMuon and positron interactions and applicationsphysica status solidi (a)19890 iqtibos

   ABIABI:AkademIndex/1989.article.000126

10. Electrical properties of p-type ZnGeP2 irradiated by H+ ions

    V. N. Brudnyı̆, V. A. Novikov

    MaqolaSemiconductor materials and interfacesRussian Physics Journal19910 iqtibos

    ABIABI:AkademIndex/1991.article.000103

11. Radiation defects in semiconductors under hydrostatic pressure

    V. N. Brudnyı̆

    MaqolaRare-earth and actinide compoundsSemiconductors19990 iqtibos

    ABIABI:AkademIndex/1999.article.000065

12. The electrical and optical properties of InAs irradiated with electrons (∼2 MeV): The energy structure of intrinsic point defects

    V. N. Brudnyı̆, S. N. Grinyaev, N. G. Kolin

    MaqolaAdvanced Semiconductor Detectors and MaterialsSemiconductors20050 iqtibos

    ABIABI:AkademIndex/2005.article.000120