B. S. Azikov

1 ta ish

Fizika-Texnika Instituti

1. Electrical properties of ion-doped GaAs films obtained by implanting E=100-keV Cd+ ions

   B. S. Azikov, V. N. Brudnyı̆, I. V. Kamenskaya +1

   MaqolaSemiconductor materials and interfacesRussian Physics Journal19810 iqtibos

   ABIABI:AkademIndex/1981.article.000091