Y. Miyagawa

4 ta ish

National Institute of Advanced Industrial Science and Technology

1. Computer simulation of SiC and B4C sputtering by Ar+ and He+ ions bombardment

   T.S. Pugacheva, F.G. Jurabekova, Y. Miyagawa +1

   MaqolaIon-surface interactions and analysisNuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms19973 iqtibos

   ABIABI:AkademIndex/2026.other.488710

2. Effect of high-dose low-energy reactive-ion implantation on cold cathode properties

   Flyura Djurabekova, Б. Е. Умирзаков, F. F. Umarov +1

   MaqolaIon-surface interactions and analysisNuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms20031 iqtibos

   ABIABI:AkademIndex/2003.article.000162

3. The radiation stimulated diffusion role in high dose, low energy, high temperature ion implantation

   S.H. Valiev, T.S. Pugacheva, F.G. Jurabekova +2

   MaqolaSilicon and Solar Cell TechnologiesNuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms19971 iqtibos

   ABIABI:AkademIndex/2026.other.488712

4. Dynamic-sasamal: simulation software for high-dose ion implantation

   Y. Miyagawa, H. Nakadate, Flyura Djurabekova +1

   MaqolaIon-surface interactions and analysisSurface and Coatings Technology20020 iqtibos

   ABIABI:AkademIndex/2002.article.000099