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AkademIndex

Xizmatlar

M. Voelskow

4 ta ish

Ion Beam Applications (France)

AkademScholarda batafsil koʻrsatkichlar

  1. Formation of Buried Layers of (SiC)<sub>1-x</sub>(AINT)<sub>x</sub> in 6H-SiC Using Ion-Beam Synthesis

    R.A. Yankov, N. Hatzopoulos, W. Fukarek +4

    Maqola19962 iqtibos
    ABI

  2. High-temperature high-dose implantation of N+ and Al+ ions in 6H-SiC

    R.A. Yankov, M. Voelskow, W. Kreissig +6

    MaqolaSilicon Carbide Semiconductor TechnologiesTechnical Physics Letters19970 iqtibos
    ABI

  3. Advanced Heterostructure Si-InSb on Insulator Formed by Bonding of Hydrogen Transferred Si Layer and Implanted SiO2 Film

    V. P. Popov, I. E. Tyschenko, Elexander Cherkov +3

    MaqolaOchiq kirishSilicon Nanostructures and PhotoluminescenceECS Transactions20070 iqtibos
    ABI

  4. Nanoscaled Silicon Based Heterostructures Formed by Interface Mediated Endotaxy

    V. P. Popov, I. E. Tyschenko, Elexander Cherkov +3

    MaqolaSilicon Nanostructures and PhotoluminescenceECS Transactions20070 iqtibos
    ABI