H. Matsunami

4 ta ish

Kyoto University

1. Deep Defect Centers in Silicon Carbide Monitored with Deep Level Transient Spectroscopy

   T. Dalibor, Gerhard Pensl, H. Matsunami +4

   Maqola19975 iqtibos

   ABIABI:AkademIndex/2026.other.155792

2. Fabrication of 6H-SiC light-emitting diodes by a rotation dipping technique: Electroluminescence mechanisms

   M. Ikeda, Tomokatsu Hayakawa, Shin-ichi Yamagiwa +2

   Maqola19792 iqtibos

   ABIABI:AkademIndex/2026.other.381991

3. Free exciton luminescence in 3C, 4H, 6H, and 15R SiC

   M. Ikeda, H. Matsunami

   Maqola19802 iqtibos

   ABIABI:AkademIndex/2026.other.381996

4. Performance limiting surface defects in SiC epitaxial p-n junction diodes

   Tsunenobu Kimoto, N. Miyamoto, H. Matsunami

   Maqola19992 iqtibos

   ABIABI:AkademIndex/2026.other.529505