Tsunenobu Kimoto

3 ta ish

Kyoto University

1. Deep Defect Centers in Silicon Carbide Monitored with Deep Level Transient Spectroscopy

   T. Dalibor, Gerhard Pensl, H. Matsunami +4

   Maqola19975 iqtibos

   ABIABI:AkademIndex/2026.other.155792

2. Material science and device physics in SiC technology for high-voltage power devices

   Tsunenobu Kimoto

   Maqola20152 iqtibos

   ABIABI:AkademIndex/2026.other.498874

3. Performance limiting surface defects in SiC epitaxial p-n junction diodes

   Tsunenobu Kimoto, N. Miyamoto, H. Matsunami

   Maqola19992 iqtibos

   ABIABI:AkademIndex/2026.other.529505