A. V. Ankudinov

3 ta ish

Ioffe Institute

1. Specific features of the epitaxial growth of narrow-gap InSb quantum dots on an InAs substrate

   K. D. Moiseev, Ya. A. Parkhomenko, Е. В. Гущина +4

   Maqola20094 iqtibos

   ABIABI:AkademIndex/2026.other.504676

2. Work function tailoring in gallium phosphide nanowires

   V. A. Sharov, P. A. Alekseev, Vladimir V. Fedorov +8

   Maqola20213 iqtibos

   ABIABI:AkademIndex/2026.other.601081

3. HVPE GaN and AIGaN 'Substrates' for Homoepitaxy

   Yu. Melnik, A. E. Nikolaev, С. И. Степанов +5

   MaqolaGaN-based semiconductor devices and materialsMaterials science forum19980 iqtibos

   ABIABI:AkademIndex/1998.article.000048