Yu. M. Zadiranov

2 ta ish

Fizika-Texnika Instituti

1. Optical and Structural Studies of Thick AlGaN Alloy Layers and AlGaN/GaN Heterostructures on Sapphire Substrates

   W. V. Lundin, A. S. Usikov, B. V. Pushnyĭ +11

   MaqolaOAOchiq kirishGaN-based semiconductor devices and materialsMaterials science forum19980 iqtibos

   ABIABI:AkademIndex/1998.article.000109

2. Investigation of the growth characteristics of epitaxial GaN layers on sapphire by microcathodoluminescence

   A. S. Usikov, V. V. Tret’yakov, W. V. Lundin +3

   MaqolaGaN-based semiconductor devices and materialsTechnical Physics Letters19990 iqtibos

   ABIABI:AkademIndex/1999.article.000218