V.Ya. Bratus

1 ta ish

V.E. Lashkaryov Institute of Semiconductor Physics

1. Structural, Electrical and Optical Properties of Bulk 4H and 6H p-Type SiC

   Evgenia V. Kalinina, A. S. Zubrilov, N.I. Kuznetsov +4

   MaqolaOAOchiq kirishSilicon Carbide Semiconductor TechnologiesMaterials science forum20000 iqtibos

   ABIABI:AkademIndex/2000.article.000091