Philippe Godignon

2 ta ish

Institute of Microelectronics of Barcelona

1. Low-doped 6H-SiC n-type epilayers grown by sublimation epitaxy

   N.S. Savkina, A. А. Lebedev, D. V. Davydov +13

   Maqola20004 iqtibos

   ABIABI:AkademIndex/2026.other.396897

2. Electron, Neutron, and Proton Irradiation Effects on SiC Radiation Detectors

   J.M. Rafı́, G. Pellegrini, Philippe Godignon +7

   Maqola20202 iqtibos

   ABIABI:AkademIndex/2026.other.471512