N. S. Averkiev

3 ta ish

Fizika-Texnika Instituti

1. Drift mobility of carriers in porous silicon

   N. S. Averkiev, L. P. Kazakova, É. A. Lebedev +1

   MaqolaSilicon Nanostructures and PhotoluminescenceSemiconductors20011 iqtibos

   ABIABI:AkademIndex/2026.other.556185

2. Change in the energy of Jahn-Teller configurations of vacancy-donor complexes induced by uniaxial strain

   N. S. Averkiev, A. A. Gutkin, M. A. Reshchikov

   MaqolaRare-earth and actinide compoundsSemiconductors19990 iqtibos

   ABIABI:AkademIndex/1999.article.000107

3. Quantum corrections to resistance of microblock tellurium at ultralow temperatures under phonon freezing conditions

   I. I. Farbshteǐn, A. V. Chernyaev, D. V. Shamshur +1

   MaqolaSemiconductor Quantum Structures and DevicesJournal of Experimental and Theoretical Physics20100 iqtibos

   ABIABI:AkademIndex/2010.article.000407