E. Kasper

2 ta ish

University of Stuttgart

1. Ion assisted MBE growth of SiGe nanostructures

   Matthias Bauer, Michael Oehme, K. Lyutovich +1

   Maqola19982 iqtibos

   ABIABI:AkademIndex/2026.other.603972

2. Investigation of the silicon ion density during molecular beam epitaxy growth

   G. Eifler, E. Kasper, Х. Б. Ашуров +1

   MaqolaSemiconductor materials and devicesJournal of Vacuum Science & Technology A Vacuum Surfaces and Films20021 iqtibos

   ABIABI:AkademIndex/2002.article.000106