A. S. Saidov

2 ta ish

Oʻzbekiston Respublikasi Fanlar Akademiyasi

1. Study of certain properties of Si-Si1−xGex (0 ≤ x ≤ 1) structures grown from a restricted tin-based solution-melt by liquid-phase epitaxy

   Б. Сапаев, A. S. Saidov

   MaqolaSemiconductor materials and interfacesSemiconductors20051 iqtibos

   ABIABI:AkademIndex/2026.other.278122

2. Development and Investigation of Semiconductor Detectors of Ionizing Radiation Based on p-Si/n-InP Heterostructures

   S. A. Radzhapov, A. S. Saidov, Sh. N. Usmonov +1

   MaqolaAdvanced Materials and Semiconductor TechnologiesInstruments and Experimental Techniques20260 iqtibos

   ABIABI:AkademIndex/2026.article.018873