Н. С. Болтовец

1 ta ish

Research Institute Orion

1. Effect of p-n junction overheating on degradation of silicon high-power pulsed IMPATT diodes

   A. E. Belyaev, Volodymyr V. Basanets, Н. С. Болтовец +11

   Maqola20112 iqtibos

   ABIABI:AkademIndex/2026.other.615669