A. E. Belyaev

2 ta ish

V.E. Lashkaryov Institute of Semiconductor Physics

1. Mechanism of contact resistance formation in ohmic contacts with high dislocation density

   A. V. Sachenko, A. E. Belyaev, Н. С. Болтовец +6

   Maqola20122 iqtibos

   ABIABI:AkademIndex/2026.other.577558

2. Effect of p-n junction overheating on degradation of silicon high-power pulsed IMPATT diodes

   A. E. Belyaev, Volodymyr V. Basanets, Н. С. Болтовец +11

   Maqola20112 iqtibos

   ABIABI:AkademIndex/2026.other.615669