Н. С. Болтовец

1 ta ish

V.E. Lashkaryov Institute of Semiconductor Physics

1. Mechanism of contact resistance formation in ohmic contacts with high dislocation density

   A. V. Sachenko, A. E. Belyaev, Н. С. Болтовец +6

   Maqola20122 iqtibos

   ABIABI:AkademIndex/2026.other.577558