M. Maryško

2 ta ish

FZU ‒ Institute of Physics of the Academy of Sciences of the Czech Republic

1. In‐situ doping and implantation of GaN layers with Mn

   Zdeněk Sofer, David Sedmidubský, Josef Stejskal +7

   MaqolaGaN-based semiconductor devices and materialsPhysica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics20090 iqtibos

   ABIABI:AkademIndex/2009.article.000176

2. Ferromagnetic and paramagnetic magnetization of implanted GaN:Ho,Tb,Sm,Tm films

   M. Maryško, J. Hejtmánek, V. V. Laguta +9

   MaqolaOAOchiq kirishZnO doping and propertiesJournal of Applied Physics20150 iqtibos

   ABIABI:AkademIndex/2015.article.000214