Sh.X. Juraev

1 ta ish

Termiz Davlat Universiteti

1. Change of electrophysical properties of the Si(111) and Si(100) surface in the process of ion implantation and next annealing

   А.С. Рысбаев, I. R. Bekpulatov, Б.Д. Игамов +1

   MaqolaOAOchiq kirishSemiconductor materials and interfacesEurasian journal of physics and functional materials20192 iqtibos

   ABIABI:AkademIndex/2026.other.213640