G. Impellizzeri

1 ta ish

Institute for Microelectronics and Microsystems

1. p-type doping of Ge by Al ion implantation and pulsed laser melting

   Ruggero Milazzo, M. Linser, G. Impellizzeri +7

   Maqola20192 iqtibos

   ABIABI:AkademIndex/2026.other.498030