Makhmudhodzha Isaev

4 ta ish

Islom Karimov nomidagi Toshkent davlat texnika universiteti

1. Investigation of parameters of Schottky diodes based on chromium silicides

   Makhmudhodzha Isaev, Abdumalik Gaibov, Abdigani Eshkulov

   MaqolaOAOchiq kirishSemiconductor materials and interfacesJournal of Physics Conference Series20204 iqtibos

   ABIABI:AkademIndex/2026.other.401147

2. Formation of Nanosized Films of Chromium Silicides on Silicon Surface

   Makhmudhodzha Isaev, Abdumalik Gaibov, Abdigani Eshkulov +1

   BobSemiconductor materials and interfacesLecture notes in networks and systems20213 iqtibos

   ABIABI:AkademIndex/2026.other.401148

3. Research of Surface and Near – Surface Region Diffusion Doped Silicon by Manganese

   Makhmudhodzha Isaev, Abdumalik Gaibov, Abdigani Eshkulov +2

   BobSemiconductor materials and interfacesLecture notes in networks and systems20221 iqtibos

   ABIABI:AkademIndex/2026.other.551198

4. Study of infrared quenching in silicide-silicon-silicide structures

   A. T. Mamadalimov, Makhmudhodzha Isaev

   MaqolaOAOchiq kirishSemiconductor materials and interfacesAdvanced Physical Research20240 iqtibos

   ABIABI:AkademIndex/2024.article.002817