Advanced Physical Research

3 ta ish

Jurnal · ISSN 2663-8436

1. Analysis of the change in the composition of the CdTe surface upon implantation of О_2^+ ions and subsequent annealing

   A.A. Abduvaitov, Gunel Imanova

   MaqolaOAOchiq kirishAdvanced Semiconductor Detectors and MaterialsAdvanced Physical Research20242 iqtibos

   ABIABI:AkademIndex/2024.article.001533

2. STUDYING THE INFLUENCE OF PROTON IRRADIATION ON THE DISTRIBUTION PROFILE OF Pt AND Cr IN SURFACE LAYERS n-Si˂Pt˃, n-Si˂Сr˃ USING ELLIPSOMETRIC SPECTROSCOPY

   Sharifa B. Utamuradova

   MaqolaOAOchiq kirishAdvanced Materials Characterization TechniquesAdvanced Physical Research20241 iqtibos

   ABIABI:AkademIndex/2024.article.001560

3. Study of infrared quenching in silicide-silicon-silicide structures

   A. T. Mamadalimov, Makhmudhodzha Isaev

   MaqolaOAOchiq kirishSemiconductor materials and interfacesAdvanced Physical Research20240 iqtibos

   ABIABI:AkademIndex/2024.article.002817