R. M. Yorkulov

4 ta ish

Islom Karimov nomidagi Toshkent davlat texnika universiteti

1. Electronic Structure and Properties of Nanoscale Structures Created on the Surface of a Free Si/Cu Film System

   З. А. Исаханов, R. M. Yorkulov, Б. Е. Умирзаков +2

   MaqolaIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20214 iqtibos

   ABIABI:AkademIndex/2026.other.402219

2. Composition and Morphology of A Si(111) Surface with a SiO2 Surface Film of Different Thicknesses

   Б. Е. Умирзаков, S. B. Donaev, R. M. Yorkulov +2

   MaqolaSilicon Nanostructures and PhotoluminescenceSemiconductors20220 iqtibos

   ABIABI:AkademIndex/2022.article.002267

3. Infuence of Ba atov adsorption and implanation of Ba-=SUP=-+-=/SUP=- ions on the electronic structure of single crystalline Ge

   Д. А. Ташмухамедова, Б. Е. Умирзаков, Y. S. Ergashov +2

   MaqolaOAOchiq kirishIon-surface interactions and analysisЖурнал технической физики20220 iqtibos

   ABIABI:AkademIndex/2022.article.007677

4. Study of the critical angle of channeling of active metal ions through thin aluminum films

   З. А. Исаханов, Б. Е. Умирзаков, S. S. Nasriddinov +2

   MaqolaOAOchiq kirishIon-surface interactions and analysisПисьма в журнал технической физики20220 iqtibos

   ABIABI:AkademIndex/2022.article.010394