A. A. Rysbaev
1 ta ish
Islom Karimov nomidagi Toshkent davlat texnika universiteti
On the Formation of Silicide Films of Metals (Li, Cs, Rb, and Ba) During Ion Implantation in Si and Subsequent Thermal Annealing
А.С. Рысбаев, M. T. Normurodov, J. B. Khujaniyozov +2
MaqolaSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20211 iqtibosABI