Kutub S. Ayupov

1 ta ish

Islom Karimov nomidagi Toshkent davlat texnika universiteti

1. X-Ray Diffraction and Raman Spectroscopy Analyses of GaSb-Enriched Si Surface Formed by Applying Diffusion Doping Technique

   Xalmurat M. Iliyev, В. Б. Оджаев, Sobir B. Isamov +5

   MaqolaOAOchiq kirishSilicon Nanostructures and PhotoluminescenceEast European Journal of Physics20236 iqtibos

   ABIABI:AkademIndex/2023.article.001215