Ganjimurod Shirinov

4 ta ish

Islom Karimov nomidagi Toshkent davlat texnika universiteti

1. Changes in the electronic structure of the Si surface as a result of ion implantation

   S. B. Donaev, Umida Ziyamukhamedova, M. Kenjaeva +3

   MaqolaOAOchiq kirishIon-surface interactions and analysisE3S Web of Conferences20234 iqtibos

   ABIABI:AkademIndex/2026.other.144489

2. Effect of implantation of barium and oxygen ions on the emission properties of Mo, Pd, and Pd-Ba

   S. B. Donaev, Ki Buem Kim, Eshboy Rabbimov +2

   MaqolaIon-surface interactions and analysisAIP conference proceedings20222 iqtibos

   ABIABI:AkademIndex/2026.other.232445

3. Study of the profiles of the distribution of atoms of the contacting material over the depth of pure and ion-doped silicon

   S. B. Donaev, Ganjimurod Shirinov, Surayyo Ergasheva +3

   MaqolaOAOchiq kirishSilicon Nanostructures and PhotoluminescenceE3S Web of Conferences20230 iqtibos

   ABIABI:AkademIndex/2023.article.006628

4. Effect of Low-Energy Implantation of In+ Ions on the Composition and Electronic Structure of Single-Crystal GaP(111)

   S. B. Donaev, Ganjimurod Shirinov, Б. Е. Умирзаков +2

   MaqolaOAOchiq kirishIon-surface interactions and analysisCoatings20240 iqtibos

   ABIABI:AkademIndex/2024.article.002442