N. B. Khaytimmetov

2 ta ish

Oʻzbekiston Milliy Universiteti

1. Influence of Accumulation of Impurity Atoms Ni and Fe on the Electrophysical Properties of Si Single Crystals

   N. A. Turgunov, Sh. K. Akbarov, N. B. Khaytimmetov +1

   MaqolaOAOchiq kirishSemiconductor materials and interfacesJournal of Nano- and Electronic Physics20240 iqtibos

   ABIABI:AkademIndex/2024.article.003369

2. Formation of Impurity Accumulations in Silicon Doped with Nickel and Copper

   S.Z. Zainabidinov, Sh. Akbarov, N. A. Turgunov +2

   MaqolaOAOchiq kirishSilicon and Solar Cell TechnologiesE3S Web of Conferences20250 iqtibos

   ABIABI:AkademIndex/2025.article.005652