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Influence of Accumulation of Impurity Atoms Ni and Fe on the Electrophysical Properties of Si Single Crystals

N. A. TurgunovResearch Institute of Physics of Semiconductors and Microelectronics at the National University of Uzbekistan, 100057, Tashkent, Republic of UzbekistanSh. K. AkbarovAndijan State University, 170100, Andijan City, Republic of UzbekistanN. B. KhaytimmetovResearch Institute of Physics of Semiconductors and Microelectronics at the National University of Uzbekistan, 100057, Tashkent, Republic of UzbekistanR. M. TurmanovaResearch Institute of Physics of Semiconductors and Microelectronics at the National University of Uzbekistan, 100057, Tashkent, Republic of Uzbekistan

Journal of Nano- and Electronic Physicsjournal2024en

Ochiq kirishOlmos

Litsenziya: cc-by

Manbada oʻqishdx.doi.org(yangi oynada ochiladi)

ABI

Annotatsiya

Journal of Nano- and Electronic Physics. Scientific journal. ISSN: 2077-6772. Journal abbreviation: J. Nano- Electron. Phys. No page charges. All articles are freely available on-line. Issued 4 times per year. Publisher: Sumy State University. (Sumy, Ukraine)

Hali tarjima qilinmagan

Mavzular

Semiconductor materials and interfaces Silicon and Solar Cell Technologies Silicon Nanostructures and Photoluminescence

Identifikatorlar

DOI: 10.21272/jnep.16(1).01004

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