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11 ta ish

Ish: Influence of Accumulation of Impurity Atoms Ni and Fe on the Electrophysical Properties of Si Single Crystals

  1. Self-organization of nickel atoms in silicon

    М. К. Бахадырханов, Х. М. Илиев, K. S. Ayupov +3

    MaqolaSilicon Nanostructures and PhotoluminescenceInorganic Materials201110 iqtibos
    ABI

  2. Decay of Impurity Clusters of Nickel and Cobalt Atoms in Silicon under the Influence of Pressure

    N. A. Turgunov, Elmurod Kh. Berkinov, D. Kh. Mamajonova

    MaqolaOchiq kirishSilicon and Solar Cell TechnologiesJournal of Nano- and Electronic Physics202110 iqtibos
    ABI

  3. Accumalations of impurity Ni atoms and their effect on the electrophysical properties of Si

    N. A. Turgunov, E.Kh. Berkinov, R.M. Turmanova

    proceedingOchiq kirish20238 iqtibos
    ABI

  4. Dopant microassociation mechanisms in Si〈Mn〉 and Si〈Ni〉

    С. З. Зайнабидинов, K. N. Musaev, N. A. Turgunov +1

    Maqola20127 iqtibos
    ABI

  5. Formation of Cobalt Impurity Microinclusions in Silicon Single Crystals

    N. A. Turgunov

    MaqolaSilicon and Solar Cell TechnologiesInorganic Materials20185 iqtibos
    ABI

  6. Precipitation of Cu and Ni in n- and p-type Czochralski-grown silicon characterized by photoluminescence imaging

    Chang Sun, Hieu T. Nguyen, Fiacre Rougieux +1

    Maqola20164 iqtibos
    ABI

  7. Effect of Thermal History on Iron Precipitation in Crystalline Silicon

    A. Haarahiltunen, Marko Yli‐Koski, Hele Savin

    Maqola20112 iqtibos
    ABI

  8. Formation and kinetics of decomposition of impurity nickel precipitates in silicon

    С. З. Зайнабидинов, N. A. Turgunov

    Maqola20042 iqtibos
    ABI

  9. Sarlavhasiz

    Boshqa2 iqtibos
    ABI

  10. Sarlavhasiz

    Boshqa1 iqtibos
    ABI

  11. INFLUENCE OF IMPURITY NI AND CU ATOMS ON THE ELECTROPHYSICAL PROPERTIES OF SI

    N. A. Turgunov, E.Kh. Berkinov, R.M. Turmanova

    MaqolaOchiq kirishSilicon and Solar Cell TechnologiesAmerican Journal Of Applied Science And Technology20231 iqtibos
    ABI