G.A. Abdikayimova

1 ta ish

Islom Karimov nomidagi Toshkent davlat texnika universiteti

1. Modeling the Impact of Incomplete Dopant Ionization on Built in Potential and C–V Characteristics of GaN p–n Junctions: A SCAPS-1D Study

   Jo`shqin Abdullayev, I. B. Sapaev, Jonibek Sh. Abdullayev +5

   MaqolaOAOchiq kirish20260 iqtibos

   ABIABI:AkademIndex/2026.article.043990