V.V. Tuchkevich

1 ta ish

A.F. Ioffe Physicotechnical Institute, Leningrad, U.S.S.R

1. Parameters of silicon microdiodes fabricated by selective epitaxy

   M. V. Drozdova, В. Л. Суханов, V.V. Tuchkevich +2

   MaqolaSilicon and Solar Cell TechnologiesThin Solid Films19760 iqtibos

   ABIABI:AkademIndex/openalex/1976.article.000089