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Parameters of silicon microdiodes fabricated by selective epitaxy

M. V. DrozdovaA.F. Ioffe Physicotechnical Institute, Leningrad, U.S.S.RВ. Л. СухановA.F. Ioffe Physicotechnical Institute, Leningrad, U.S.S.RV.V. TuchkevichA.F. Ioffe Physicotechnical Institute, Leningrad, U.S.S.RN.M. SchmidtA.F. Ioffe Physicotechnical Institute, Leningrad, U.S.S.RB. YavichA.F. Ioffe Physicotechnical Institute, Leningrad, U.S.S.R

Thin Solid Filmsjournal1976en

ABI

Annotatsiya

Annotatsiya mavjud emas.

Mavzular

Silicon and Solar Cell Technologies Thin-Film Transistor Technologies Integrated Circuits and Semiconductor Failure Analysis

Identifikatorlar

DOI: 10.1016/0040-6090(76)90041-9

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