B. Yavich

2 ta ish

A.F. Ioffe Physicotechnical Institute, Leningrad, U.S.S.R

1. Parameters of silicon microdiodes fabricated by selective epitaxy

   M. V. Drozdova, В. Л. Суханов, V.V. Tuchkevich +2

   MaqolaSilicon and Solar Cell TechnologiesThin Solid Films19760 iqtibos

   ABIABI:AkademIndex/openalex/1976.article.000089

2. Nature of Defects in MOCVD Grown GaAlAs-GaAs QW DHs

   B. Yavich, I. N. Kochnev, P. P. Buinov +4

   MaqolaSemiconductor materials and devicesDiffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena19910 iqtibos

   ABIABI:AkademIndex/openalex/1991.article.000080