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Vladimir I. Gridnev

5 ta ish

Institute of Nuclear Physics, Tomsk Polytechnical Institute

  1. Investigation of Quantum States of Fast Electrons under Planar Channeling in Silicon Crystals

    Vladimir I. Gridnev, V. V. Kaplin, V. G. Khlabutin +2

    MaqolaCrystallography and Radiation Phenomenaphysica status solidi (b)19872 iqtibos
    ABI

  2. Angular Distributions of Fast Electrons at Planar Channeling in Silicon Crystals

    V. V. Kaplin, S. B. Nurmagambetov, Vladimir I. Gridnev +4

    MaqolaCrystallography and Radiation Phenomenaphysica status solidi (b)19842 iqtibos
    ABI

  3. Observation of similarity of angular distributions of electrons at planar channeling in silicon crystal

    Vladimir I. Gridnev, V. G. Khlabutin, E. I. Rozum +1

    MaqolaCrystallography and Radiation Phenomenaphysica status solidi (b)19870 iqtibos
    ABI

  4. Quantum Modulation of Electron Dechanneling

    V. G. Khlabutin, Vladimir I. Gridnev, E. I. Rozum

    MaqolaNuclear materials and radiation effectsphysica status solidi (b)19880 iqtibos
    ABI

  5. Volume capture of 1.5 to 5.7 MeV electrons in quantum channeling states

    V. V. Kaplin, Vladimir I. Gridnev, V. G. Khlabutin +2

    MaqolaCrystallography and Radiation Phenomenaphysica status solidi (b)19890 iqtibos
    ABI